050-7607 rev c 10-2005 apt75gn120b2_l(g) typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speci?ed. static electrical characteristics characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 3m a) gate threshold voltage (v ce = v ge , i c = 3ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 75a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 75a, t j = 125c) collector cut-off current (v ce = 1200v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 1200v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) intergrated gate resistor symbol v (br)ces v ge(th) v ce(on) i ces i ges r g(int) units volts a na ? symbol v c es v ge i c1 i c2 i cm ssoa p d t j ,t stg t l apt75gn120b2_l(g) 1200 30 200 99 225 225a @ 1200v 833 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage continuous collector current 8 @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 150c switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. apt w ebsite - http://www .a dv ancedpo we r. com caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. utilizing the latest field stop and trench gate technologies, these igbt's have ultra low v ce(on) and are ideal for low frequency applications that require absolute minimum conduction loss. easy paralleling is a result of very tight parameter distribution and a slightly positive v ce(on) temperature coef?cient. a built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. low gate charge simpli?es gate drive design and minimizes losses. ? 1200v field stop ? trench gate: low v ce(on) ? easy paralleling ? intergrated gate resistor: low emi, high reliability applications : welding, inductive heating, solar inverters, smps, motor drives, ups min typ max 1200 5.0 5.8 6.5 1.4 1.7 2.1 2.0 100 tbd 600 10 ? g c e 12 00v apt75gn120b2 apt75gn120l apt75gn 120 b2g* APT75GN120LG* *g denotes rohs compliant, pb free terminal finish. t-ma x to-264 (l) (b2) ?
050-7607 rev c 10-2005 apt75gn120b2_l(g) 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in ?gure 21, but with a silicon carbide diode. 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) 7 r g is external gate resistance, not including r g(int) nor gate driver impedance. (mic4452) 8 current limited by lead temperature. apt reserves the right to change, without notice, the speci?cations and information contained herein. unit c/w gm min typ max .15 n/a 5.9 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 600v i c = 75a t j = 150c, r g = 4.3 ? 7 , v ge = 15v, l = 100h,v ce = 1200v i nductive switching (25c) v cc = 800v v ge = 15v i c = 75a r g = 1.0 ? 7 t j = +25c inductive switching (125c) v cc = 800v v ge = 15v i c = 75a r g = 1.0 ? 7 t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 6 min typ max 4800 275 210 9.0 425 30 245 225 60 41 620 110 8045 9620 7640 60 41 725 200 8620 13000 11400 unit pf v nc a ns j ns j thermal and mechanical characteristics
050-7607 rev c 10-2005 apt75gn120b2_l(g) typical performance curves v gs(th) , threshold voltage v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 250s pulse test<0.5 % duty cycle 160 140 120 100 80 60 40 20 0 160 140 120 100 80 60 40 20 0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 0 100 200 300 400 500 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 160 140 120 100 80 60 40 20 0 16 14 12 10 8 6 4 2 0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 300 250 200 150 100 50 0 v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, threshold voltage vs. junction temperature figure 8, dc collector current vs case temperature 13 &15v 11v 10v 9v 12v 8v 7v v ge = 15v. 250s pulse test <0.5 % duty cycle t j = 125c t j = 25c t j = -55c t j = 125c t j = 25c t j = -55c v ge = 15v v ce = 960v v ce = 600v v ce = 240v i c = 75a t j = 25c t j = 25c. 250s pulse test <0.5 % duty cycle i c = 150a i c = 75a i c = 37.5a i c = 150a i c = 75a i c = 37.5a lead temperatur e limite d lead temperatur e limite d
050-7607 rev c 10-2005 apt75gn120b2_l(g) v ge =15v,t j =125c v ge =15v,t j =25c v ce = 800v r g = 1.0 ? l = 100 h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature v ce = 800v v ge = +15v r g = 1.0 ? r g = 1.0 ? , l = 100 h, v ce = 800v v ce = 800v t j = 25c , or =125c r g = 1.0 ? l = 100 h 70 60 50 40 30 20 10 0 180 160 140 120 100 80 60 40 20 0 50000 40000 30000 20000 10000 0 100000 80000 60000 40000 20000 0 800 700 600 500 400 300 200 100 0 300 250 200 150 100 50 0 25000 20000 15000 10000 5000 0 50000 40000 30000 20000 10000 0 v ge = 15v t j = 125c , v ge = 15v t j = 25 or 125c ,v ge = 15v t j = 25c , v ge = 15v t j = 125c t j = 25c v ce = 800v v ge = +15v r g = 1.0 ? t j = 125c t j = 25c v ce = 800v v ge = +15v r g = 1.0 ? 10 40 70 100 130 160 10 40 70 100 130 160 10 40 70 100 130 160 10 40 70 100 130 160 10 40 70 100 130 160 10 40 70 100 130 160 0 10 20 30 40 50 0 25 50 75 100 125 r g = 1.0 ? , l = 100 h, v ce = 800v e on2, 150a e off, 150a v ce = 800v v ge = +15v t j = 125 c e on2, 75a e off, 75a e on2, 37.5a e off, 37.5a e on2, 150a e off, 150a e on2, 75a e off, 75a e on2, 37.5a e off, 37.5a
050-7607 rev c 10-2005 apt75gn120b2_l(g) typical performance curves 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 6,000 1,000 500 100 250 200 150 100 50 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance v s collecto r-to-emitter voltage figure 18,minimim switching safe operating area 0 10 20 30 40 50 0 200 400 600 800 1000 1200 1400 figure 19b, transient thermal impedance model 10 30 50 70 90 110 130 150 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 % v ce = 800v r g = 1.0 ? 60 10 5 1 0.5 0.1 0.05 f max = min (f ma x , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e of f f max2 = p diss = t j - t c r jc peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : c res c ies c oes 0.068 6 0.063 0 0.018 2 0.0139 0.203 1.62 powe r (watts ) junctio n temp. ( c) rc mode l case temperature. ( c)
050-7607 rev c 10-2005 apt75gn120b2_l(g) figure 22, turn-on switching waveforms and de?nitions figure 23, turn-off switching waveforms and de?nitions t j = 125c collector current collector voltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% i c a d.u.t. v ce figure 21, inductive switching test circui t v cc apt75dq120 apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved. e1 sac: tin, silver, copper t-max ? (b2) package outline dimensions in millimeters and (inches) collector emitte r gate collector 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) bs c 2-plcs. dimensions in millimeters and (inches) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) collector emitte r gate collector 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bs c 2.87 (.113) 3.12 (.123) 2-plcs. e1 sac: tin, silver, copper to-264(l) package outline
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